F7N65 - ROUM

F7N65 7A 650V N-channel Enhancement Mode Power MOSFET

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 650V RDS(on) （TYP)= 1.2Ω ID = 7A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate.

Features

● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤1.4Ω)
● Low Gate Charge(Typical Data:24nC)
● Low Reverse Transfer Capacitances(Typical:5.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Value Parameter Symbol 7N65/I7N65/E7N65 /B7N65/D7N65 Maximum Drian-Source.