F7105Q-VB F7105Q-VB Datasheet www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 P-Channel - 30 0.018 at VGS = 10 V 0.020 at VGS = 8 V 0.024 at VGS = 4.5 V 0.040 atVGS = - 10 V 0.044 at VGS = - 8 V 0.050 atVGS= - 4.5 V ID (A)a Qg (Typ.) 8e 8e 6.2 8e - 8e - 8e 18.5 - 7.5 FEATURES • Halogen-free.
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Motor Drive
• Mobile Power Bank
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
D1 G1
S1
S2 G2
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avala.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F71612A |
Feature Integration Technology |
USB CIR Chip | |
2 | F71872F |
Fintek |
Super H/W Monitor + LPC IO | |
3 | F71872FG |
Fintek |
Super H/W Monitor + LPC IO | |
4 | F71882 |
Fintek |
Super Hardware Monitor | |
5 | F7007N |
Fuji Electric |
N-channel/ Single 30V/7A | |
6 | F7202 |
VBsemi |
P-Channel MOSFET | |
7 | F7207 |
International Rectifier |
IRF7207 | |
8 | F7313 |
International Rectifier |
Power MOSFET | |
9 | F7338 |
International Rectifier |
IRF7338 | |
10 | F75363 |
Feature Integration Technology |
Accuracy Temperature Sensor IC | |
11 | F75NM60Z |
UTC |
600V N-CHANNEL SUPER-JUNCTION MOSFET | |
12 | F7702 |
VBsemi |
P-Channel MOSFET |