F75NM60Z - UTC

F75NM60Z 600V N-CHANNEL SUPER-JUNCTION MOSFET

The UTC F75NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.  FEATURES * RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A * Fast body diode MOS.

Features

* RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A
* Fast body diode MOSFET technology
* Low switching losses due to reduced Qrr
* Single Pulse Avalanche Energy Rated
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Avalanche energy tested
 SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-905.B F75NM60Z
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package F75NM60ZL-T47-T F75NM60ZG-T47-T TO-247 F75NM60ZL-T474-T F75NM60ZG-T474-T TO-247-4 Note: Pin Assignment: G: Gate C: Collector E: Emitter.