ESMT F49L800UA/F49L800BA Operation Temperature Condition -40°C~85°C 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory 1. FEATURES z Single supply voltage 2.7V-3.6V z Fast access time: 70/90 ns z 1,048,576x8 / 524,288x16 switchable by BYTE pin z Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Fl.
z Single supply voltage 2.7V-3.6V z Fast access time: 70/90 ns z 1,048,576x8 / 524,288x16 switchable by BYTE pin z Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Flash z Low power consumption - 7mA typical active current - 25uA typical standby current z 100,000 program/erase cycles typically z 20 years data retention z Command register architecture - Byte programming (9us typical) - Sector Erase(sector structure: one 16 KB, two 8 KB, one 32 KB, and fifteen 64 KB) z Auto Erase (chip & sector) and Auto Program - Any combination o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F49L800BA |
ESMT |
8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory | |
2 | F4905S |
International Rectifier |
IRF4905S | |
3 | F497 |
Fujitsu Media Devices Limited |
16-bit Proprietary Microcontroller | |
4 | F4-100R12KS4 |
eupec |
IGBT | |
5 | F4-100R12KS4 |
Infineon |
IGBT | |
6 | F4-100R17ME4_B11 |
Infineon |
IGBT | |
7 | F4-150R12KS4 |
Infineon |
IGBT | |
8 | F4-150R17ME4_B11 |
Infineon |
IGBT | |
9 | F4-200R17N3E4 |
Infineon |
IGBT | |
10 | F4-250R17MP4_B11 |
Infineon |
IGBT | |
11 | F4-3L50R07W2H3F_B11 |
Infineon |
IGBT | |
12 | F4-50R06W1E3 |
Infineon |
IGBT |