PowerMOSFET F31W60CP 600V31A Feature LowRON FastSwitching ■ OUTLINE Package:MTO-3P ϩοτ߸هʢྫʣ %BUF DPEF ཧ൪߸ʢྫʣ $POUSPM /P ໊ 5ZQF /P 0000 31W60CP ᶆ Unit:mm ᶃᶄᶅ ᶃ( ᶄ% ᶅ 4 ᶆ% Web。 。 Fordetailsoftheoutlinedimensions,referto ourweb site.Asforthe marking,refertothespecification"Marking,TerminalConnection". ■ RATINGS ● Absol.
ctance gfs ID= 15.5A,VDS=10V StaticDrain-SourceOn-stateResistance R(DS)ON ID= 15.5A,VGS=10V GateThressholdVoltage VTH ID= 1mA,VDS=10V Source-DrainDiodeForwadeVoltage VSD IS= 15.5A,VGS=0V ThermalResistance θjc Junctiontocase TotalGateCharge Qg VGS=10V,ID= 31A,VDD=400V InputCapacitance Ciss ReverseTransferCapacitance Crss VDS= 100V,VGS=0V,f=1MHz OutputCapacitance Coss Turn-ondelaytime td(on) Risetime tr ID= 15.5A,VDD=150V,RL= 9.7Ω Turn-offdelaytime td(off) VGS(+)= 10V,VGS(-)= 0V Falltime tf Ratings -55~150 150 600 ±30 31 93 31 120 0.8 Unit ℃ V A W Nm .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F3105 |
Omega |
Thinfilm RTD Elements | |
2 | F3105 |
ETC |
RTD Elements | |
3 | F313PI |
ST Microelectronics |
SGSF313PI | |
4 | F3002 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
5 | F3003 |
CSF |
Tube | |
6 | F3007S |
VBsemi |
N-Channel MOSFET | |
7 | F3027 |
CSF |
Tube | |
8 | F30D05 |
Mospec Semiconductor |
Power Rectifier | |
9 | F30D10 |
Mospec Semiconductor |
Power Rectifier | |
10 | F30D15 |
Mospec Semiconductor |
Power Rectifier | |
11 | F30D20 |
Mospec Semiconductor |
Power Rectifier | |
12 | F30D30 |
Mospec Semiconductor |
POWER RECTIFIERS |