The F1429LB is a differential input / single-ended output 1.4GHz to 3.2GHz high-gain RF amplifier. The combination of impedance translation, high gain, high linearity, and low noise performance makes this device an ideal first-stage amplifier for a variety of transmitter applications. The F1429LB is optimized to operate with a single 5V power supply and a no.
RF range: 1.4GHz to 3.2GHz
Gain = 21.5dB typical at 2.5GHz
Noise figure = 1.9dB typical at 2.5GHz
OIP3 = +40dBm typical at 2.5GHz
Output P1dB = +22dBm typical at 2.5GHz
Gain variation over temperature = ±0.2 typical
100Ω differential input impedance
50Ω single-ended output impedance
3.3V or 5V power supply
ICC = 64mA at 5V
1.3mA standby current
1.8V and 3.3V logic support for STBY control
Operating temperature (TEP) range: -40°C to +115°C
2 × 2 mm 12-DFN package
Block Diagram
Figure 1. F1429LB Block Diagram
F1429 LB
RF_IN+
RF
RF_ IN-
Bias
Bias and Control :
VC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F1420 |
Renesas |
RF Amplifier | |
2 | F1420 |
IDT |
RF Amplifier | |
3 | F1421 |
Renesas |
RF Amplifier | |
4 | F1421 |
IDT |
RF Amplifier | |
5 | F1423 |
Integrated Device Technology |
TX Differential Input RF Amplifier | |
6 | F1427 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
7 | F1400A |
MTRONPTI |
Clock Oscillator | |
8 | F1400NC18 |
WESTCODE |
Chopper Diode | |
9 | F1401 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
10 | F1404ZS |
IRF |
Power MOSFET | |
11 | F1410 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
12 | F1415 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |