Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1415 PATEN.
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1415 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 250 Watts Junction to Case Thermal Resistance 0.8 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 150 V Drain to Source Voltage 150 V Gate to Source Voltage 30V o -65 o C to 150o C 10 A RF CHARACT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F1410 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
2 | F1400A |
MTRONPTI |
Clock Oscillator | |
3 | F1400NC18 |
WESTCODE |
Chopper Diode | |
4 | F1401 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
5 | F1404ZS |
IRF |
Power MOSFET | |
6 | F1420 |
Renesas |
RF Amplifier | |
7 | F1420 |
IDT |
RF Amplifier | |
8 | F1421 |
Renesas |
RF Amplifier | |
9 | F1421 |
IDT |
RF Amplifier | |
10 | F1423 |
Integrated Device Technology |
TX Differential Input RF Amplifier | |
11 | F1427 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
12 | F1429LB |
Renesas |
SE-Out Amplifier |