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Tc=25℃/unlessotherwisespecified) Item Symbol Conditions Ratings MIN TYP MAX Unit Drain-SourceBreakdownVoltage V(BR)DSS ID=1mA,VGS=0V ZeroGateVoltageDrainCurrent IDSS VDS=800V,VGS=0V Gate-SourceLeakageCurrent IGSS VGS=±30V,VDS=0V ForwardTransconductance gfs ID=5.5A,VDS=10V StaticDrain-SourceOn-stateResistance R(DS)ON ID=5.5A,VGS=10V GateThresholdVoltage VTH ID=0.5mA,VDS=10V Source-DrainDiodeForwardVoltage VSD IS=5.5A,VGS=0V ThermalResistance θjc Junctiontocase TotalGateCharge Qg VDD=400V,VGS=10V,ID=11A InputCapacitance Ciss ReverseTransferCapacitance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F11F60C3M |
SHINDENGEN |
Power MOSFET | |
2 | F11F60CPM |
SHINDENGEN |
Power MOSFET | |
3 | F1100 |
Integrated Device Technology |
RF to IF Dual Downconverting Mixer | |
4 | F1100C |
Champion |
5V FR-4 Surface Mount Crystal Clock Oscillators | |
5 | F1100E |
Fox Electronics |
5.0V TTL CLOCK OSCILLATOR | |
6 | F1102NBGI |
IDT |
RF to IF Dual Downconverting Mixer | |
7 | F1107 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
8 | F1108 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
9 | F1116 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
10 | F1120 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
11 | F1129 |
Renesas |
RF Amplifier | |
12 | F1129LB |
Renesas |
RF Amplifier |