This document describes the specifications for the IDTF1152 Zero-DistortionTM RF to IF Downconverting Mixer. This device is part of a series of mixers offered with high side or low side injection options for all UTRA bands. See the Part# Matrix for the details of all devices in this series. The F1152 dual channel device is designed to operate with a single 5.
• Dual Path for Diversity Systems
• Ideal for Multi-Carrier Systems
• 8.5 dB Gain
• Ultra linear +43 dBm IP3O
• Low NF < 10 dB
• 200 Ω output impedance
• Ultra high +13 dBm P1dBI
• Pin Compatible w/existing solutions
• 6x6 36 pin package
• Power Down mode
• < 200 nsec settling from Power Down
• Minimizes Synth pulling in Standby Mode
• Low Current Mode : ICC = 232 mA
• Standard Mode: ICC = 327 mA
• NOTE production BOM on p. 20
DEVICE BLOCK DIAGRAM
RFIN_A RF VCO RFIN_B
IFOUT_A
Bias Control
STBY 2 LOISET
LCMODE
IFOUT_B
ORDERING INFORMATION
Omit IDT prefix
0.8 mm height package
Tape & Re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F1150NBGI |
IDT |
RF to IF Dual Downconverting Mixer | |
2 | F1100 |
Integrated Device Technology |
RF to IF Dual Downconverting Mixer | |
3 | F1100C |
Champion |
5V FR-4 Surface Mount Crystal Clock Oscillators | |
4 | F1100E |
Fox Electronics |
5.0V TTL CLOCK OSCILLATOR | |
5 | F1102NBGI |
IDT |
RF to IF Dual Downconverting Mixer | |
6 | F1107 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
7 | F1108 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
8 | F1116 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
9 | F1120 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR | |
10 | F1129 |
Renesas |
RF Amplifier | |
11 | F1129LB |
Renesas |
RF Amplifier | |
12 | F1129MB |
Renesas |
RF Amplifier |