ESD5V0S - Infineon Technologies

ESD5V0S Silicon TVS Diodes

Silicon TVS Diodes • ESD / transient protection of data and power lines in 3.3 V / 5 V applications according to: IEC61000-4-2 (ESD): ± 30 kV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (surge): 40 A/600 W (8/20 µs) • Max. working voltage: 5 V • Low clamping voltage • Low reverse current • Pb-free (RoHS compliant) package Applications • Uni or .

Features

ange Top Storage temperature Tstg Value 30 40 600 -55...125 -65...150 Unit kV A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics - Reverse working voltage Breakdown voltage I(BR) = 1 mA Reverse current VR = 3.3 V VR = 5 V VRWM V(BR) IR -5.5 6.7 5 8 --5 - - 20 Clamping voltage (positive transient) IPP = 5 A, tp = 8/20 µs2) IPP = 24 A, tp = 8/20 µs2) IPP = 40 A, tp = 8/20 µs2) VCL - 7.5 9.5 - 9 12 - 11 14 Forward clamping voltage (negative transients) IPP = 5 A, tp = 8/20 µs2) IPP = 24 A, tp = 8/20 .