ESD5V0H1U-02LS - Infineon Technologies AG

ESD5V0H1U-02LS Ultra-Low Capacitance TVS Diode

www.DataSheet.co.kr ESD5V0H1U-02LS Ultra-Low Capacitance TVS Diode • Avalanche diode with low clamping / trigger voltage designed for replacement of polymer suppressor devices • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 (ESD): 16 kV (contact) IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns) • No degradation or shifting of charact.

Features

rking P 1 2009-06-18 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ESD5V0H1U-02LS Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VESD T op T stg Value Unit ESD contact discharge1) Operating temperature range Storage temperature 16 -55...125 -65...150 kV °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. Characteristics typ. max. Unit Reverse working voltage Avalanche breakdown voltage I(BR) = 1 mA, from pin 2 to 1 VRWM V(BR) IR VCL CT - 200 40 5 0.1 - V Reverse current VR = 5 V µA V p.