ESD11N5.0ST5G - ON Semiconductor

ESD11N5.0ST5G ESD Protection Diodes

of survivability specs. © Semiconductor Components Industries, LLC, 2010 1 November, 2017 − Rev. 5 Publication Order Number: ESD11N5.0S/D ESD11N5.0ST5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reve.

Features

• Low Capacitance 0.6 pF
• Low Clamping Voltage
• Small Body Outline Dimensions: 0.60 mm x 0.30 mm
• Low Body Height: 0.3 mm
• Stand−off Voltage: 5.0 V
• Low Leakage
• Response Time is < 1 ns
• IEC61000−4−2 Level 4 ESD Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact Air ±8.0 kV ±15 Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance,.