of survivability specs. © Semiconductor Components Industries, LLC, 2015 October, 2017 − Rev. 7 1 Publication Order Number: ESD11B/D ESD11B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current.
• Low Capacitance 12 pF
• Low Clamping Voltage
• Small Body Outline Dimensions: 0.60 mm x 0.30 mm
• Low Body Height: 0.3 mm
• Stand−off Voltage: 5.0 V
• Low Leakage
• Response Time is < 1 ns
• IEC61000−4−2 Level 4 ESD Protection
• IEC61000−4−4 Level 4 EFT Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 3 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 61000−4−2 (ESD)
Contact Air
±15 kV ±15
Total Power Dissipation on FR−5 Board (Note .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ESD110-B1 |
Infineon |
Transient Voltage Suppressor | |
2 | ESD112-B1-02 |
Infineon |
Transient Voltage Suppressor Diodes | |
3 | ESD112-B1-02EL |
Leiditech |
TVS Diode | |
4 | ESD112-B1-02EL |
Infineon |
TVS Diodes | |
5 | ESD112-B1-02ELS |
Infineon |
TVS Diodes | |
6 | ESD113-B1 |
Infineon |
Protection Device | |
7 | ESD114-U1-02 |
Infineon |
Transient Voltage Suppressor | |
8 | ESD119-B1-W01005 |
Infineon |
Transient Voltage Suppressor | |
9 | ESD119-B1-W01005 |
Leiditech |
Ultra Low Capacitance Bi-directional TVS Diode | |
10 | ESD119B1W01005E6327XTSA1 |
Leiditech |
Ultra Low Capacitance Bi-directional TVS Diode | |
11 | ESD11A3.3DT5G |
ON Semiconductor |
Transient Voltage Suppressors ESD Protection Diodes | |
12 | ESD11B5.0ST5G |
ON Semiconductor |
Mid-Capacitance Bi-Directional TVS Diode |