ESD11B5.0ST5G - ON Semiconductor

ESD11B5.0ST5G Mid-Capacitance Bi-Directional TVS Diode

of survivability specs. © Semiconductor Components Industries, LLC, 2009 July, 2009 − Rev. 2 1 Publication Order Number: ESD11B5.0S/D ESD11B5.0ST5G www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage .

Features

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• Low Capacitance 12 pF Low Clamping Voltage Small Body Outline Dimensions: 0.60 mm x 0.30 mm Low Body Height: 0.3 mm Stand−off Voltage: 5.0 V Low Leakage Response Time is < 1 ns IEC61000−4−2 Level 4 ESD Protection IEC61000−4−4 Level 4 EFT Protection These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM PIN 1 DSN2 CASE 152AA XXXX YYY XXXX YYY = Specific Device Code = Year Code ORDERING INFORMATION Device ESD11B5.0ST5G Package DSN2 (Pb−Free) Shipping† 5000/Tape & Reel Mechanical Characteristics MOUNTING POSITION: Any QU.