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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 200mΩ ID 1.7A Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMZB08P03G |
Excelliance MOS |
P?Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMZB08P03H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMZB08P03V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMZB20P03L |
Excelliance MOS |
MOSFET |
|
| 5 | EMZB21A03VG |
Excelliance MOS |
MOSFET |
|
| 6 | EMZB21C03G |
Excelliance MOS |
MOSFET |
|
| 7 | EMZ1 |
Rohm |
General purpose transistor (dual transistors) |
|
| 8 | EMZ1 |
SeCoS |
Dual Transistors |
|
| 9 | EMZ1DXV6T1 |
ON Semiconductor |
Dual General Purpose Transistors |
|
| 10 | EMZ1DXV6T5 |
ON Semiconductor |
Dual General Purpose Transistors |
|
| 11 | EMZ2 |
Rohm |
Dual Transistor |
|
| 12 | EMZ51 |
ROHM |
General Purpose Transister |
|