N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 650V D RDSON (MAX.) 2.75Ω ID 4A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 2.
ER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 650V, VGS = 0V VDS = 520V, VGS = 0V, TJ = 125 °C VGS = 10V, ID = 2A VDS = 25V, ID = 2A DYNAMIC 650 V 23 5 ±100 nA 10 A 25 2.3 2.75 Ω 2 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge1,2 Gate‐Source Charge1,2 Gat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMD04N65CS |
Excelliance MOS |
MOSFET | |
2 | EMD04N65F |
Excelliance MOS |
MOSFET | |
3 | EMD04N60AB |
Excelliance MOS |
MOSFET | |
4 | EMD04N60AK |
Excelliance MOS |
MOSFET | |
5 | EMD04N60CS |
Excelliance MOS |
MOSFET | |
6 | EMD04N60CSB |
Excelliance MOS |
MOSFET | |
7 | EMD04N60CSK |
Excelliance MOS |
MOSFET | |
8 | EMD04N60F |
Excelliance MOS |
MOSFET | |
9 | EMD04N04E |
Excelliance MOS |
MOSFET | |
10 | EMD04N04H |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | EMD04N06A |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | EMD04N06E |
Excelliance MOS |
N?Channel Logic Level Enhancement Mode Field Effect Transistor |