EMD04N60F - Excelliance MOS

EMD04N60F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.5Ω ID 4A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25.

Features

SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125 °C VGS = 10V, ID = 2A VDS = 25V, ID = 2A DYNAMIC 600 V 23 5 ±100 nA 10 A 25 2.1 2.5 Ω 2 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge1,2 Gate‐Source Charge1,2 Gate‐D.