EMBA2A06HS - Excelliance MOS

EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V 120mΩ RDSON (MAX.)@VGS=4.5V 180mΩ ID @TC=25℃ 11A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C .

Features

.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 2019/4/22 Page. 1 EMBA2A06HS ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 60 VDS = VGS, ID = 250uA 1 VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V.