EMB22C04H - Excelliance MOS

EMB22C04H N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 50mΩ ID 33A ‐22A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current .

Features

UNIT °C / W p.1 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. EMB22C04H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A N‐CH 40 VGS = 0V, ID = ‐250A P‐CH ‐40 VDS = V.