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EMB22C04H |
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| Part Number | EMB22C04H |
| Manufacturer | Excelliance MOS |
| Description | N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 50mΩ ID 33A ‐22A UIS, Rg 100% Tested Pb‐Free Lead Plating & H... |
| Features |
UNIT °C / W
p.1
1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
EMB22C04H
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A
N‐CH 40
VGS = 0V, ID = ‐250A
P‐CH ‐40
VDS = V... |
| Document |
 EMB22C04H Data Sheet
PDF 228.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB22C04A |
Excelliance MOS |
MOSFET |
|
| 2 | EMB22C04G |
Excelliance MOS |
MOSFET |
|
| 3 | EMB22A04G |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB22N04A |
Excelliance MOS |
MOSFET |
|
| 5 | EMB22N04G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|