EMB17N03G N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 17mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Curren.
a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/8/15 p.1 EMB17N03G ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMB17A03G |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | EMB17A03H |
Excelliance MOS |
MOSFET | |
3 | EMB17A03V |
Excelliance MOS |
Dual N-Channel MOSFET | |
4 | EMB17C03G |
Excelliance MOS |
N & P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | EMB10 |
Rohm |
PNP Digital Transistors | |
6 | EMB10FHA |
ROHM |
PNP -100mA -50V Complex Digital Transistors | |
7 | EMB11 |
Rohm |
Dual Digital Transistors | |
8 | EMB11 |
JCET |
Dual Digital Transistors | |
9 | EMB11A03G |
Excelliance MOS |
MOSFET | |
10 | EMB12K03GP |
Excelliance MOS |
MOSFET | |
11 | EMB12K03V |
Excelliance MOS |
MOSFET | |
12 | EMB12N03A |
Excelliance MOS |
MOSFET |