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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 14mΩ ID -12A P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Dra.
/06 p.1 EMB14P03G PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -10V, ID = -12A VGS = -4.5V, ID = -9A VDS = -5V, ID = -12A DYNAMIC -30 V -1 -1.5 -3 ±100 nA ±500 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMB14P03V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB1412 |
ETCTI |
EMB1412 MOSFET Gate Driver (Rev. B) |
|
| 3 | EMB1428Q |
ETCTI |
EMB1428Q Switch Matrix Gate Driver (Rev. A) |
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| 4 | EMB1432Q |
ETCTI |
EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) |
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| 5 | EMB1433Q |
ETCTI |
EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) |
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| 6 | EMB1499Q |
ETCTI |
EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) |
|
| 7 | EMB14N10CS |
Excelliance MOS |
MOSFET |
|
| 8 | EMB14N10F |
Excelliance MOS |
MOSFET |
|
| 9 | EMB14N10H |
Excelliance MOS |
MOSFET |
|
| 10 | EMB10 |
Rohm |
PNP Digital Transistors |
|
| 11 | EMB10FHA |
ROHM |
PNP -100mA -50V Complex Digital Transistors |
|
| 12 | EMB11 |
Rohm |
Dual Digital Transistors |
|