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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14.6mΩ ID 40A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current P.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMB14N10CS |
Excelliance MOS |
MOSFET |
|
| 2 | EMB14N10H |
Excelliance MOS |
MOSFET |
|
| 3 | EMB1412 |
ETCTI |
EMB1412 MOSFET Gate Driver (Rev. B) |
|
| 4 | EMB1428Q |
ETCTI |
EMB1428Q Switch Matrix Gate Driver (Rev. A) |
|
| 5 | EMB1432Q |
ETCTI |
EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) |
|
| 6 | EMB1433Q |
ETCTI |
EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) |
|
| 7 | EMB1499Q |
ETCTI |
EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) |
|
| 8 | EMB14P03G |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | EMB14P03V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | EMB10 |
Rohm |
PNP Digital Transistors |
|
| 11 | EMB10FHA |
ROHM |
PNP -100mA -50V Complex Digital Transistors |
|
| 12 | EMB11 |
Rohm |
Dual Digital Transistors |
|