EMB07N03VQ - Excelliance MOS

EMB07N03VQ Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.8 mΩ 10.5 mΩ ID @TC=25℃ 73 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = .

Features

MAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient3 SYMBOL RθJC RθJA TYPICAL 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test MAXIMUM 1.5 55 UNIT °C/W 2020/4/10 P.1 A.0 EMB07N03VQ ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resista.