EMB07N03HS - Excelliance MOS

EMB07N03HS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.0mΩ 10.6mΩ ID @TC=25℃ 51.0A ID @TA=25℃ 14.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C TC.

Features

ient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/8/26 A.1 EMB07N03HS LIMITS ±20 51 46 14 11 110 30 45.0 22.5 56.8 22.7 2.3 1.5 -55 to 150 UNIT V A mJ W W °C MAXIMUM 2.2 55 UNIT °C/W P.1 EMB07N03HS ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Sourc.