EtronTech EM6A8160TSA Etron Confidential 4M x 16 DDR Synchronous DRAM (SDRAM) Advanced (Rev. 1.2 Apr. /2009) Features • Fast clock rate: 200MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 1M x 16-bit for each bank • Programmable Mode a.
• Fast clock rate: 200MHz
• Differential Clock CK & CK
• Bi-directional DQS
• DLL enable/disable by EMRS
• Fully synchronous operation
• Internal pipeline architecture
• Four internal banks, 1M x 16-bit for each bank
• Programmable Mode and Extended Mode Registers
- CAS Latency: 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• Individual byte writes mask control
• DM Write Latency = 0
• Auto Refresh and Self Refresh
• 4096 refresh cycles / 64ms
• Precharge & active power down
• Power supplies: VDD & VDDQ = 2.5V ± 5%
• Interface: SSTL_2 I/O Interface
• Package: 66 Pin TSOP II,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EM6A8160 |
Etron Technology |
4M x 16 DDR Synchronous DRAM | |
2 | EM6A9160 |
Etron Technology |
8M x 16 DDR Synchronous DRAM | |
3 | EM6A9320 |
Etron Technology Inc. |
4M x 32 DDR SDRAM | |
4 | EM6A9320BIB |
Etron Technology |
4M x 32 bit DDR Synchronous DRAM | |
5 | EM6A9325 |
Etron Technology |
4M x 32 Low Power SDRAM | |
6 | EM6AA160 |
Etron Technology |
16M x 16 bit DDR Synchronous DRAM | |
7 | EM6AA320 |
Etron Technology |
8M x 32 DDR SDRAM | |
8 | EM6AB080 |
Etron Technology |
64M x 8 bit DDR Synchronous DRAM | |
9 | EM6AB160 |
Etron Technology |
32M x 16 bit DDR Synchronous DRAM | |
10 | EM6AB160TSA |
Etron Technology |
32M x 16 bit DDR Synchronous DRAM | |
11 | EM60000 |
ELAN Microelectronics Corp |
Stereo Four Channels 8-Bit Based Sound Processor | |
12 | EM60001 |
ELAN Microelectronics |
Stereo Four Channels 8-Bit Based Sound Processor |