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EM640FV16FW - Emerging Memory & Logic Solutions

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EM640FV16FW 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM

Name CS1, CS2 OE WE A0~A17 I/O1~I/O16 Function Chip select inputs Output Enable input Write Enable input Address Inputs Data Inputs/Outpus Name Vcc Vss UB LB *NC Function Power Supply Ground Upper Byte (I/O9~16) Lower Byte (I/O1~8) No Connection 2 EM640FV16FW Series Low Power, 256Kx16 SRAM FUNCTIONAL SPECIFICATIONS There are 3 classifications for EMLSI di.

Features

- Process Technology : 0.18µm Full CMOS - Organization :256K x16 - Power Supply Voltage => EM640FV16FW : 2.7~3.6V - Three state output and TTL Compatible - Packaged product designed for 55/70ns GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um - Typical top-level metalization : => Metal ( Ti/TiN/Al-Cu 0.5% ) : 5.7K Angstroms thickness - Topside Passivation : => 7K Angstroms PE-SiN - Typical Pad Size : 90.0um x 80.0um - Wafer diameter : 8 inch OPTIONS - C1/W1 : DC Probed Die/Wafer @ Hot Temp - C2/W2 : DC/AC Probed Die/Wafer @ Hot Tem.

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