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EM641FT8 - Emerging Memory & Logic Solutions

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EM641FT8 512K x8 bit Low Power Full CMOS Static RAM

CS H L L L OE X L X H WE X H L H I/O0-7 High-Z Data Out Data In High-Z Mode Deselected/ Power down Read Write Selected, Output Disabled Power Stand by Active Active Active Note : X means don’t care. (Must be low or high state) 3 EM641FT8 RECOMMENDED DC OPERATING CONDITIONS 1) Parameter Supply voltage Ground Input high voltage Input low voltage www.DataShe.

Features

- Very high speed : 45ns - Process Technology : 0.15um Full CMOS - Organization : 512K x8 - Power Supply Voltage => EM641FT8V : 4.5V~5.5V - Low Data Retention Voltage :1.5V (MIN) - Three state output and TTL Compatible www.DataSheet4U.com - Packaged product designed for 45/55/70ns - KGD based on SOP package structure Low Power, 512Kx8 SRAM GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um +/-15um - Typical top-level metallization : => Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms - Topside Passivation : => Passivation (HDP/pN.

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