EM44DM0888LBA - Eorex

EM44DM0888LBA Double DATA RATE SDRAM

The EM44DM0888LBA is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 16Mbits x 8 banks by 8 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 MT/sec (DDR2-1066) for general applications. The chip is design.

Features

• JEDEC Standard VDD/VDDQ = 1.8V±0.1V.
• All inputs and outputs are compatible with SSTL_18 interface.
• Fully differential clock inputs (CK, /CK) operation.
• Eight Banks
• Posted CAS
• Bust length: 4 and 8.
• Programmable CAS Latency (CL): 6 & 7
• Programmable Additive Latency (AL): 0, 1, 2, 3, 4, 5 & 6.
• Write Latency (WL) =Read Latency (RL) -1.
• Read Data Strobe (RDQS) supported
• Bi-directional Differential Data Strobe (DQS).
• Data inputs on DQS centers when write.
• Data outputs on DQS, /DQS edges when read.
• On chip DLL align DQ, DQS and /DQS transition with CK transition.
• DM mask.