EM44CM1688LBC - Eorex

EM44CM1688LBC Double DATA RATE SDRAM

The EM44CM1688LBC is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 16Mbits x 8 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 800 Mb/sec/pin (DDR2-800) for general applications. The chip is des.

Features

• JEDEC Standard VDD/VDDQ = 1.8V±0.1V.
• All inputs and outputs are compatible with SSTL_18 interface.
• Fully differential clock inputs (CK, /CK) operation.
• Eight Banks
• Posted CAS
• Bust length: 4 and 8.
• Programmable CAS Latency (CL): 5, 6
• Programmable Additive Latency (AL): 0, 1, 2, 3, 4, 5
• Write Latency (WL) =Read Latency (RL) -1.
• Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
• Bi-directional Differential Data Strobe (DQS).
• Data inputs on DQS centers when write.
• Data outputs on DQS, /DQS edges when read.
• On chip DLL align DQ, DQS and /DQS transi.