EIB1415-0.3P - Excelics Semiconductor

EIB1415-0.3P Internally Matched Power FET

EIB1415-0.3P UPDATED 8/31/2006 14.0-14.5 GHz 0.3-Watt Internally Matched Power FET 0.080 MIN Excelics EIB1415-0.3P 0.080 MIN DRAIN 0.020 0.250 FEATURES • • • • • • 14.0– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +26.0 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Non - Hermetic Me.

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• 14.0
  – 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +26.0 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Non - Hermetic Metal Flange Package 0.433 0.362 GATE YYWW SN 0.070 0.256 0.200 0.004 0.051 0.025 0.100 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 8 V, IDSQ ≈ 120mA Gain at 1dB Compression f = 14.0-14.5GHz VDS = 8 V, IDSQ ≈ 120mA Gain Flatness f = 14.0-14.5GHz VD.