Excelics • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1414-2P Not recommended for new designs. Contact factory.
HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1414-2P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1414-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=14.0-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=14.0-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficienc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIB1414A-4P |
Excelics Semiconductor |
14.0-14.5GHz 4W Internally Matched Power FET | |
2 | EIB1414-2P |
Excelics Semiconductor |
Internally Matched Power FET | |
3 | EIB1414-4P |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIB1415-0.3P |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIB1415-2P |
Excelics Semiconductor |
Internally Matched Power FET | |
6 | EIB1415-4P |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIB1011-2P |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIB1011-4P |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIB1011-4P |
Excelics Semiconductor |
10.7-11.7GHz 4W Internally Matched Power FET | |
10 | EIB1213-2P |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIB1213-4P |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIB1314-2P |
Excelics Semiconductor |
Internally Matched Power FET |