EDI9LC644V - WEDC

EDI9LC644V 128Kx32 SSRAM/1Mx32 SDRAM

n Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz n n n n n n n DSP Memory Solution • Texas Instruments TMS320C6201 • Texas Instruments TMS320C6701 Packaging: • 153 pin BGA, JEDEC MO-163 3.3V Operating supply voltage Direct control interface to both the SSRAM and SDRAM ports on the “C6x” Common address and databus 65% space savi.

Features

DESCRIPTION n Clock speeds:
• SSRAM: 200, 166,150, and 133 MHz
• SDRAMs: 125 and 100 MHz n n n n n n n DSP Memory Solution
• Texas Instruments TMS320C6201
• Texas Instruments TMS320C6701 Packaging:
• 153 pin BGA, JEDEC MO-163 3.3V Operating supply voltage Direct control interface to both the SSRAM and SDRAM ports on the “C6x” Common address and databus 65% space savings vs. monolithic solution Reduced system inductance and capacitance The EDI9LC644VxxBC is a 3.3V, 128K x 32 Synchronous Pipeline SRAM and a 1Mx32 Synchronous DRAM array constructed with one 128K x 32 SBSRAM and two 1Mx16 SDRA.