EDI2DL32256V - White Electronic

EDI2DL32256V 256Kx32 Synchronous Pipline Burst SRAM

The EDI2DL32256VxxBC is a 3.3V, 256Kx32 Synchronous Pipeline Burst SRAM constructed with two 256Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 119 lead, 14mm by 22mm, BGA. It is available with clock speeds of166, 150 and 133 MHz. The device is a Pipeline Burst SRAM, allowing the user to develop a fast external memory for Te.

Features

s tKHQV times of 3.5, 3.8 and 4.0ns s 166, 150 and 133 MHz clock speed s DSP Memory Solution
• Texas Instruments’ TMS320C6201
• Texas Instruments’ TMS320C67x s Package:
• 119 pin BGA, JEDEC MO-163 s 3.3V Operating Supply Voltage s 3.5ns Output Enable access time s Single Write Control and Output Enable Lines s Single Chip Enable Line s 56% space savings vs. monolithic TQFPs s Multiple VCC and VSS pins s Reduced inductance and capacitance DESCRIPTION The EDI2DL32256VxxBC is a 3.3V, 256Kx32 Synchronous Pipeline Burst SRAM constructed with two 256Kx16 die mounted on a multi-layer laminate substr.