The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output. It is optimized for multicarriers applications and allows customers to use class A or cla.
1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems Packages Available QFN-16 (4x4mm) SOIC-8 Product Description The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output. I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ECP200D |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
2 | ECP200G |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
3 | ECP203 |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
4 | ECP2459 |
Energy Core |
Step-Down Converter | |
5 | ECP-5414 |
ETC |
AMD Geode GX1 Communication Platform | |
6 | ECP050D |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
7 | ECP050G |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
8 | ECP052 |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
9 | ECP052D |
TriQuint |
High Linearity InGaP HBT Amplifier | |
10 | ECP053 |
TriQuint |
High Linearity InGaP HBT Amplifier | |
11 | ECP100D |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
12 | ECP100G |
WJ Communication |
High Gain HBT Amplifier |