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ECP200 |
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| Part Number | ECP200 |
| Manufacturer | EIC discrete Semiconductors |
| Description | The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) proce... |
| Features |
1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation
Applications
Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems
Packages Available
QFN-16 (4x4mm) SOIC-8
Product Description
The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output. I... |
| Document |
 ECP200 Data Sheet
PDF 86.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ECP200D |
WJ Communication |
High Linearity InGaP HBT Amplifier |
|
| 2 | ECP200G |
WJ Communication |
High Linearity InGaP HBT Amplifier |
|
| 3 | ECP203 |
WJ Communication |
High Linearity InGaP HBT Amplifier |
|
| 4 | ECP2459 |
Energy Core |
Step-Down Converter |
|
| 5 | ECP-5414 |
ETC |
AMD Geode GX1 Communication Platform |
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