E3M0280090D - CREE

E3M0280090D Silicon Carbide Power MOSFET

VDS 900 V E3M0280090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 11.5 A RDS(on) 280 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qr.

Features

Package
• 3rd generation SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable Benefits
• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency Applications
• Automotive EV battery chargers
• Renewable energy
• High voltage DC/DC converters
• Telecom Power Supplies Part Number E3M0280090D Package TO-247-3 M.