E3M0060065K - Wolfspeed

E3M0060065K Silicon Carbide Power MOSFET

E3M0060065K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capaci.

Features

Package
• 3rd generation SiC MOSFET technology Tab
• Optimized package with separate driver source pin Drain
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
•
• Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Drain (Pin 1, TAB)
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switchi.