DTP10N80FSJ - Din-Tek

DTP10N80FSJ N-Channel Super Junction Power MOSFET

DTN10N80SJ/DTP10N80SJ/DTP10N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) VGS = 10 V 65 7 15 Configuration Single 0.60 TO-220AB TO-220 FULLPAK FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced.

Features

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS) APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting TO-247AC D GD S Top View GDS Top View S D G Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pu.