DS2016 - Dallas Semiconducotr

DS2016 2k x 8 3V/5V Operation Static RAM

A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC GND - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS techn.

Features

§ Low-power CMOS design § Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V § Full operation for VCC = 5.5V to 2.7V § Data retention voltage = 5.5V to 2.0V § Fast 5V access time - DS2016-100 100ns § Reduced-speed 3V access time - DS2016-100 250ns § Operating temperature range of -40°C to +85°C § Full static operation § TTL compatible inputs and outputs over voltage range of 5.5V to 2.7V § Available in 24-pin DIP and 24-pin SO packages § Suitable for both battery operated and battery backup applications PIN ASSIGNMENT A.