The DS2003 is comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature common emitter, open collector outputs. To maximize their effectiveness, these units contain suppression diodes for inductive loads and appropriate emitter base resistors for leakage. The DS2003 has a series base resistor to each Darlington pair, th.
n n n n n n Seven high gain Darlington pairs High output voltage (VCE = 50V) High output current (IC = 350 mA) TTL, PMOS, CMOS compatible Suppression diodes for inductive loads Extended temperature range Connection Diagram 16-Lead DIP DS009647-1 Top View Order Numbers N Package Number N16E DS2003TN DS2003CN M Package Number M16A DS2003TM DS2003CM © 2000 National Semiconductor Corporation DS009647 www.national.com DS2003 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DS2000-3 |
Emerson |
AC-DC / Distributed Power Front-End 1U | |
2 | DS2001 |
National Semiconductor |
HIGH CURRENT / VOLTAGE DARLINGTON DRIVERS | |
3 | DS2002 |
National Semiconductor |
HIGH CURRENT / VOLTAGE DARLINGTON DRIVERS | |
4 | DS2002SF |
Dynex Semiconductor |
Rectifier Diode | |
5 | DS2004 |
National Semiconductor |
(DS2003 / DS2004) High Current/Voltage Darlington Drivers | |
6 | DS2004SF |
Dynex Semiconductor |
Rectifier Diode | |
7 | DS2007SF |
Dynex Semiconductor |
Rectifier Diode | |
8 | DS2009 |
Dallas |
512 x 9 FIFO Chip | |
9 | DS2009SF |
Dynex |
Rectifier Diode | |
10 | DS2012SF |
Dynex Semiconductor |
Rectifier Diode | |
11 | DS2016 |
Dallas Semiconducotr |
2k x 8 3V/5V Operation Static RAM | |
12 | DS202 |
XILINX |
DC and Switching Characteristics |