PDIP 1 2 3 4 5 6 7 8 9 10 21 23 24 25 11 12 13 15 16 17 18 19 20 22 26 27 28 — 14 — PIN PowerCap 1, 2, 3, 31–34 30 25 24 23 22 21 20 19 18 28 29 27 26 16 15 14 13 12 11 10 9 8 7 — 6 5 4 17 NAME N.C. A12 A7 A6 A5 A4 A3 A2 A1 A0 A10 A11 A9 A8 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CE OE CE2 WE VCC PFO GND X1, X2, VBAT No Connection FUNCTION Address Inputs Data Inpu.
Integrated NV SRAM, Real-Time Clock, Crystal, Power-Fail Control Circuit and Lithium Energy Source
Clock Registers are Accessed Identically to the Static RAM. These Registers Reside in the Eight Top RAM Locations.
Totally Nonvolatile with Over 10 Years of Operation in the Absence of Power
Access Times of 85ns and 100ns
BCD-Coded Year, Month, Date, Day, Hours, Minutes, and Seconds with Leap Year Compensation Valid Up to 2100
Power-Fail Write Protection Allows for ±10% VCC Power Supply Tolerance
Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DS1640 |
Dallas Semiconducotr |
Personal Computer Power FET | |
2 | DS1640C |
Dallas Semiconducotr |
Personal Computer Power FET | |
3 | DS1642 |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
4 | DS1643P |
Maxim Integrated Products |
Nonvolatile Timekeeping RAMs | |
5 | DS1644 |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
6 | DS1644LPM |
Dallas Semiconducotr |
Nonvolatile Timekeeping RAM | |
7 | DS1644P |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
8 | DS1645AB |
Dallas Semiconducotr |
Partitionable 1024K NV SRAM | |
9 | DS1645Y |
Dallas Semiconducotr |
Partitionable 1024K NV SRAM | |
10 | DS1646 |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
11 | DS1646P |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
12 | DS1647 |
Maxim Integrated |
Nonvolatile Timekeeping RAM |