VCC GND IN1-IN4 OUT1-OUT4 GATE1-GATE4 NC LATCH - +3 to +5 Volt Input - Ground - FET Sources - FET Drains - FET Control Gates - No Connection - Gate Inputs Latch Control DESCRIPTION The DS1640 contains four P channel power MOS FETs designed as switches to conserve power in personal computer systems. When connected to power management control units, power con.
Contains four P channel power FET switches that can each supply over 300 mA @ 0.2 volts drop Controlled directly from CMOS or TTL level signals Fast switching time of less than 10 µs at rated supply current 16-pin DIP or 16-pin SOIC surface mount package Positive logic signal turns each FET on and ground or low level signal turns each FET off Off condition allows less than 50 nA of current flow Low control gate capacitance of less than 5 pF FET gates can either follow inputs or be latched Designed for use with power supplies ranging from +3 to +5 volts PIN ASSIGNMENT IN1 GATE1 OUT1 LATCH GND .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DS1640C |
Dallas Semiconducotr |
Personal Computer Power FET | |
2 | DS1642 |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
3 | DS1643 |
Maxim Integrated Products |
Nonvolatile Timekeeping RAMs | |
4 | DS1643P |
Maxim Integrated Products |
Nonvolatile Timekeeping RAMs | |
5 | DS1644 |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
6 | DS1644LPM |
Dallas Semiconducotr |
Nonvolatile Timekeeping RAM | |
7 | DS1644P |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
8 | DS1645AB |
Dallas Semiconducotr |
Partitionable 1024K NV SRAM | |
9 | DS1645Y |
Dallas Semiconducotr |
Partitionable 1024K NV SRAM | |
10 | DS1646 |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
11 | DS1646P |
Maxim Integrated |
Nonvolatile Timekeeping RAM | |
12 | DS1647 |
Maxim Integrated |
Nonvolatile Timekeeping RAM |