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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOL.
=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-EmitterSaturation Voltage IC= 0.2A ;IB= 0.02A VBE(sat) Base-Emitter Saturation Voltage IC=0.2A ;IB= 0.02 A ICBO Collector Cutoff Current VCB=50 , IE= 0 ICEO Emitter Cutoff Current VCE= 50V; IC= 0 hFE-1 DC Current Gain IC=0.1A ; VCE=10V DS15 MIN TYP MAX UNIT 100 V 200 V 1 V 1.5 V 0.1 mA 0.5 mA 35 320 NOTICE： ISC reserves the rights to make changes of the content herei.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | DS1 |
IXYS Corporation |
Rectifier Diode Avalanche Diode |
|
| 2 | DS1-12D |
IXYS Corporation |
Rectifier Diode Avalanche Diode |
|
| 3 | DS1000 |
Dallas Semiconducotr |
5-Tap Silicon Delay Line |
|
| 4 | DS1003 |
Dallas Semiconductor |
4-Tap Silicon Delay Line |
|
| 5 | DS1004 |
Dallas Semiconducotr |
5-Tap High Speed Silicon Delay Line |
|
| 6 | DS1005 |
Dallas Semiconducotr |
5-Tap Silicon Delay Line |
|
| 7 | DS1007 |
Dallas Semiconducotr |
7-1 Silicon Delay Line |
|
| 8 | DS100BR111 |
Texas Instruments |
Ultra Low Power 10.3 Gbps 1-Lane Repeater |
|
| 9 | DS100BR111A |
Texas Instruments |
Ultra Low Power 10.3 Gbps 1-Lane Repeater |
|
| 10 | DS100BR210 |
Texas Instruments |
Ultra Low Power 10.3 Gbps 2-Channel Repeater |
|
| 11 | DS100BR410 |
Texas Instruments |
Low Power Quad Channel Repeater |
|
| 12 | DS100DF410 |
Texas Instruments |
Low Power 10GbE Quad Channel Retimer |
|