·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous -60 V ±20 V ID Drain Current-Continuous -14 A IDM Drain Current-Single Pluse -25 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operati.
·Drain Current
–ID= -14A@ TC=25℃
·Drain Source Voltage-
: VDSS= -60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =110mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
-60
V
±20
V
ID
Drain Current-Continuous
-14
A
IDM
Drain Current-Single Pluse
-25
A
PD
Total Dissipation @TC=25℃
40
W
TJ
M.
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMP6180SK3-13 |
INCHANGE |
P-Channel MOSFET | |
2 | DMP6180SK3Q |
DIODES |
60V P-Channel MOSFET | |
3 | DMP6185SE |
Diodes |
P-Channel MOSFET | |
4 | DMP6185SEQ |
DIODES |
60V P-CHANNEL MOSFET | |
5 | DMP6185SK3 |
Diodes |
P-Channel MOSFET | |
6 | DMP6101A |
Crydom |
Microprocessor Interface | |
7 | DMP6110SFDF |
DIODES |
P-CHANNEL MOSFET | |
8 | DMP6110SFDFQ |
DIODES |
P-CHANNEL MOSFET | |
9 | DMP6110SSD |
Diodes |
P-Channel MOSFET | |
10 | DMP6110SSDQ |
DIODES |
P-Channel MOSFET | |
11 | DMP6110SSS |
Diodes |
P-Channel MOSFET | |
12 | DMP6110SSSQ |
Diodes |
P-Channel MOSFET |