DMP6180SK3-13 - INCHANGE

DMP6180SK3-13 P-Channel MOSFET

isc P-Channel MOSFET Transistor DMP6180SK3-13 ·FEATURES ·Static drain-source on-resistance: RDS(on)≦110mΩ(@VGS= -10V; ID= -12A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power Management Functions ·DC / DC Converters ·ABSOLUTE MAXIMUM RATIN.

Features

·Static drain-source on-resistance: RDS(on)≦110mΩ(@VGS= -10V; ID= -12A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power Management Functions
·DC / DC Converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃
·THERMAL CHARACTERISTICS .