DMN2005K - Diodes Incorporated

DMN2005K N-Channel Transistor

DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features  Low On-Resistance  Very Low Gate Threshold Voltage, 0.9V Max.  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  ESD Protected Gate  For au.

Features

 Low On-Resistance
 Very Low Gate Threshold Voltage, 0.9V Max.
 Fast Switching Speed
 Low Input/Output Leakage
 Ultra-Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 ESD Protected Gate
 For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
 Case: SOT23
 Cas.