NEW PRODUCT Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected up to 2kV • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability SOT-523 ESD PROTECTED TO 2kV Top View DMN2004TK N-CHANNEL E.
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 2kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
SOT-523
ESD PROTECTED TO 2kV
Top View
DMN2004TK
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
lea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMN2004DMK |
Diodes |
DUAL N-CHANNEL MOSFET | |
2 | DMN2004DWK |
Diodes Incorporated |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
3 | DMN2004DWKQ |
Diodes |
Dual N-Channel MOSFET | |
4 | DMN2004K |
Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
5 | DMN2004VK |
Diodes Incorporated |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
6 | DMN2004WK |
Diodes Incorporated |
N-Channel MOSFET | |
7 | DMN2004WKQ |
Diodes |
N-Channel MOSFET | |
8 | DMN2005DLP4K |
Diodes |
Dual N-Channel MOSFET | |
9 | DMN2005K |
Diodes Incorporated |
N-Channel Transistor | |
10 | DMN2005LP4K |
Diodes Incorporated |
N-Channel Transistor | |
11 | DMN2005LPK |
Diodes Incorporated |
N-Channel Transistor | |
12 | DMN2005UFG |
Diodes |
N-Channel MOSFET |