TetraFET DMD5029 DMD5029-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE 1 DIM Millimetres Tol. A 15.24 0.50 B 10.80 0.13 C 45° 5° D 9.78 0.13 E 8.38 0.13 F 27.94 0.13 G 1.52R 0.13 H 10.16 0.15 I 21.84 0.2.
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN
– 20 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
875W (438W -A Version)
BVDSS
Drain
– Source Breakdown Voltage
*
125V
BVGSS
Gate
– Source Breakdown Voltage
*
±20V
ID(sat)
Drain Current
*
21A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab Plc reserves the right to change test conditio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMD5029 |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | DMD5028 |
Seme LAB |
METAL GATE RF SILICON FET | |
3 | DMD5028-A |
Seme LAB |
METAL GATE RF SILICON FET | |
4 | DMD5010 |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | DMD5010-A |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | DMD5012 |
Seme LAB |
IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET | |
7 | DMD5012-A |
Seme LAB |
IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET | |
8 | DMD5601 |
Daewoo Semiconductor |
15CH SELECTOR | |
9 | DMD5602 |
Daewoo Semiconductor |
10CH SELECTOR | |
10 | DMD5603 |
Daewoo Semiconductor |
10CH SELECTOR | |
11 | DMD5802 |
Daewoo Semiconductor |
(DMD5802 / DMD5803) UNIVERSAL PROGRAMMABLE DUAL PLL | |
12 | DMD5803 |
Daewoo Semiconductor |
(DMD5802 / DMD5803) UNIVERSAL PROGRAMMABLE DUAL PLL |