TetraFET DMD5028 DMD5028-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE 1 JK PIN 2 PIN 4 DRAIN 1 GATE 2 DIM Millimetres Tol. A 15.24 0.50 B 10.80 0.13 C 45° 5° D 9.78 0.13 E 8.38 0.13 F 27.94 0.13 G 1..
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN
– 20 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz
PD BVDSS BVGSS ID(sat) Tstg Tj
Power Dissipation Drain
– Source Breakdown Voltage
* Gate
– Source Breakdown Voltage
* Drain Current
* Storage Temperature Maximum Operating Junction Temperature
875W (438W -A Version) 125V ±20V 18A
–65 to 150°C 200°C
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMD5028 |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | DMD5029 |
Seme LAB |
METAL GATE RF SILICON FET | |
3 | DMD5029-A |
Seme LAB |
METAL GATE RF SILICON FET | |
4 | DMD5010 |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | DMD5010-A |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | DMD5012 |
Seme LAB |
IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET | |
7 | DMD5012-A |
Seme LAB |
IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET | |
8 | DMD5601 |
Daewoo Semiconductor |
15CH SELECTOR | |
9 | DMD5602 |
Daewoo Semiconductor |
10CH SELECTOR | |
10 | DMD5603 |
Daewoo Semiconductor |
10CH SELECTOR | |
11 | DMD5802 |
Daewoo Semiconductor |
(DMD5802 / DMD5803) UNIVERSAL PROGRAMMABLE DUAL PLL | |
12 | DMD5803 |
Daewoo Semiconductor |
(DMD5802 / DMD5803) UNIVERSAL PROGRAMMABLE DUAL PLL |